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inspired 另外,soi还具有了较高的跨导、降低的寄生电容、减弱的 短沟效应 、较为陡直的亚阈斜率,与体硅电路相比,soi电路的抗 辐照强度 提高了100倍。 在高温环境下,soi器件性能明显优于体. latest update 首先 fd soi 的沟道不需要掺杂,因为未掺杂的足够薄的 silicon 才能做到全耗尽。当然你的观点本身就有问题,电子是source和drain和bulk跑到沟道形成耗尽层的,不只是从衬底来的。 其.
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Discussion
A
Alex
Mar 10, 2026
Mar 10, 2026
Good explanation.
👍 9C
Chris
Feb 28, 2026
Feb 28, 2026
Straight to the point.
👍 10R
Rizky
Feb 28, 2026
Feb 28, 2026
Good explanation.
👍 17
Mar 16, 2026
Very helpful content.
👍 12